Sub-Thermionic steep switching in hole-doped WSe2 Transistors

Connor J. McClellan; Eilam Yalon; Lili Cai; Saurabh Suryavanshi; Xiaolin Zheng; Eric Pop

doi:10.1109/DRC.2018.8442237

Sub-Thermionic steep switching in hole-doped WSe₂ Transistors

Connor J. McClellan, Eilam Yalon, Lili Cai, Saurabh Suryavanshi, Xiaolin Zheng, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching (SS < 5 mV/ decade}) and high on-current (I_ON≈ 400μ A/μ m) in non-uniformly hole-doped WSe₂ transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials.

Original language	English (US)
Title of host publication	2018 76th Device Research Conference, DRC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538630280
DOIs	https://doi.org/10.1109/DRC.2018.8442237
State	Published - Aug 20 2018
Externally published	Yes
Event	76th Device Research Conference, DRC 2018 - Santa Barbara, United States Duration: Jun 24 2018 → Jun 27 2018

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2018-June
ISSN (Print)	1548-3770

Other

Other	76th Device Research Conference, DRC 2018
Country/Territory	United States
City	Santa Barbara
Period	6/24/18 → 6/27/18

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/DRC.2018.8442237

Library availability

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Cite this

McClellan, C. J., Yalon, E., Cai, L., Suryavanshi, S., Zheng, X., & Pop, E. (2018). Sub-Thermionic steep switching in hole-doped WSe₂ Transistors. In 2018 76th Device Research Conference, DRC 2018 Article 8442237 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442237

Sub-Thermionic steep switching in hole-doped WSe₂ Transistors. / McClellan, Connor J.; Yalon, Eilam; Cai, Lili et al.
2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8442237 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

McClellan, CJ, Yalon, E, Cai, L, Suryavanshi, S, Zheng, X & Pop, E 2018, Sub-Thermionic steep switching in hole-doped WSe₂ Transistors. in 2018 76th Device Research Conference, DRC 2018., 8442237, Device Research Conference - Conference Digest, DRC, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442237

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