Sub-Thermionic steep switching in hole-doped WSe2 Transistors

Connor J. McClellan, Eilam Yalon, Lili Cai, Saurabh Suryavanshi, Xiaolin Zheng, Eric Pop

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching (SS < 5 mV/ decade}) and high on-current (ION≈ 400μ A/μ m) in non-uniformly hole-doped WSe2 transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
StatePublished - Aug 20 2018
Externally publishedYes
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other76th Device Research Conference, DRC 2018
Country/TerritoryUnited States
CitySanta Barbara

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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