@inproceedings{2fc8f9d0b299481c83d5745ff2852fe0,
title = "Sub-nanosecond Reverse Recovery Measurement for ESD Devices",
abstract = "A method to measure sub-nanosecond reverse recovery in wafer-level test structures is presented. The setup uses a transmission line pulse generator with a time-domain through connection to measure the device-under-test current. The setup is used to measure reverse recovery in a 65-nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and the forward bias behavior.",
keywords = "Diodes, electrostatic discharge, semiconductor device measurement, semiconductor device modeling, transmission line measurements",
author = "Alex Ayling and Shudong Huang and Elyse Rosenbaum",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",
year = "2020",
month = apr,
doi = "10.1109/IRPS45951.2020.9129596",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings",
address = "United States",
}