Sub-nanosecond Reverse Recovery Measurement for ESD Devices

Alex Ayling, Shudong Huang, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A method to measure sub-nanosecond reverse recovery in wafer-level test structures is presented. The setup uses a transmission line pulse generator with a time-domain through connection to measure the device-under-test current. The setup is used to measure reverse recovery in a 65-nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and the forward bias behavior.

Original languageEnglish (US)
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
DOIs
StatePublished - Apr 2020
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: Apr 28 2020May 30 2020

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2020-April
ISSN (Print)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period4/28/205/30/20

Keywords

  • Diodes
  • electrostatic discharge
  • semiconductor device measurement
  • semiconductor device modeling
  • transmission line measurements

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ayling, A., Huang, S., & Rosenbaum, E. (2020). Sub-nanosecond Reverse Recovery Measurement for ESD Devices. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings [9129596] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2020-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9129596