Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs nanowire mask

Jae Cheol Shin, Chen Zhang, Xiuling Li

Research output: Contribution to journalArticle

Abstract

We report a non-lithographical method for the fabrication of ultra-thin silicon (Si) nanowire (NW) and nano-sheet arrays through metal-assisted- chemical-etching (MacEtch) with gold (Au). The mask used for metal patterning is a vertical InAs NW array grown on a Si substrate via catalyst-free, strain-induced, one-dimensional heteroepitaxy. Depending on the Au evaporation angle, the shape and size of the InAs NWs are transferred to Si by Au-MacEtch as is (NWs) or in its projection (nano-sheets). The Si NWs formed have diameters in the range of 25-95nm, and aspect ratios as high as 250 in only 5min etch time. The formation process is entirely free of organic chemicals, ensuring pristine Au-Si interfaces, which is one of the most critical requirements for high yield and reproducible MacEtch.

Original languageEnglish (US)
Article number305305
JournalNanotechnology
Volume23
Issue number30
DOIs
StatePublished - Aug 3 2012

Fingerprint

Silicon
Nanowires
Masks
Etching
Metals
Organic Chemicals
Organic chemicals
Epitaxial growth
Gold
Aspect ratio
Evaporation
indium arsenide
Fabrication
Catalysts
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs nanowire mask. / Shin, Jae Cheol; Zhang, Chen; Li, Xiuling.

In: Nanotechnology, Vol. 23, No. 30, 305305, 03.08.2012.

Research output: Contribution to journalArticle

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