Sub-100 nm gate III-V MOSFET for digital applications

Keyphrases

• Hole Mobility 100%
• Sub-100 Nm 100%
• Gate-all-around (GAA) MOSFET 100%
• Digital Applications 100%
• MOSFET 66%
• Self-aligned 66%
• Gallium Arsenide 33%
• Strain-induced 33%
• Transport Properties 33%
• III-V Semiconductors 33%
• III-V 33%
• Thermal Stability 33%
• Device Performance 33%
• Strain Effect 33%
• Enhancement-mode (E-mode) 33%
• Electron Holes 33%
• Electron Mobility 33%
• Drain Regions 33%
• Source Area 33%
• PMOSFET 33%
• Mobility Enhancement 33%
• Induced Holes 33%
• III-V Alloys 33%
• Si MOSFET 33%
• Process Issues 33%
• Nanoscale CMOS 33%
• Oxide-semiconductor Interfaces 33%
• III-V Channel Materials 33%
• Digital IC 33%
• Drain Doping 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Compound Semiconductor 16%
• Gallium Arsenide 16%
• Limitations 16%
• Field Effect Transistor 16%
• Device Performance 16%
• Figure of Merit 16%
• Oxide Semiconductor 16%
• Effect of Strain 16%
• Mobility Enhancement 16%
• Source Region 16%
• Drain Region 16%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Hole Mobility 50%
• Field Effect Transistor 16%
• Gallium Arsenide 16%
• Oxide Semiconductor 16%
• III-V Semiconductor 16%
• Thermal Stability 16%
• Electron Mobility 16%
• Effect of Strain 16%