The evolution of line edge roughness and sidewall roughness was studied during the fabrication of deep etched InP/InGaAsP heterostructures. The use of scanning electron microscopy was made to extract line edge profiles of the electron beam exposed resist and the lifted-off NiCr metal mask. Atomic force microscopy with an ultrasharp tip was utilized for the extraction of the sidewall profiles of InP/InGaAsP mesa waveguides that were etched by inductively coupled plasma reactive ion etching. The processing step that influenced the roughness of the etched waveguides was determined by the evolution of the roughness.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering