Study of manganese accumulation in ion implanted GaAs influenced by Fermi energy and annealing technique

Keyphrases

• Annealing 66%
• Annealing Atmosphere 33%
• Annealing Process 100%
• Annealing Temperature Effect 33%
• Annealing Time 33%
• Buffer Layer 33%
• Chemical Profile 33%
• Device Application 33%
• Electrical Profile 33%
• Energy Method 100%
• Epitaxial 33%
• Fermi Energy 100%
• Field-effect Transistors 33%
• Gallium Arsenide 100%
• H2 Atmosphere 33%
• Implant Materials 33%
• Implantation Damage 33%
• Ion Implantation 100%
• Manganese Accumulation 100%
• Mn Accumulation 33%
• Post-implantation Annealing 33%
• Relative Amount 33%
• Relative Type 33%
• Secondary Ion Mass Spectrometry 66%
• Semi-insulating GaAs 33%
• Transistor Device 33%
• Vapor Phase 33%

Material Science

• Annealing 100%
• Buffer Layer 25%
• Field Effect Transistor 25%
• Gallium Arsenide 100%
• Manganese 100%
• Secondary Ion Mass Spectrometry 50%

Engineering

• Annealing Temperature 25%
• Buffer Layer 25%
• Fermi Energy 100%
• Field-Effect Transistor 25%
• Gallium Arsenide 100%
• Implant 50%
• Relative Amount 25%
• Temperature Time 25%