Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless

M. Feng, S. P. Kwok, V. Eu, B. W. Henderson

Research output: Contribution to journalArticle

Abstract

We have studied, compared, and correlated the chemical redistribution of Cr and Si, electrical profiles, mobilities, carrier concentrations, and channel conduction currents in Si-implanted semi-insulating GaAs substrates annealed with and without a SiO2 cap under an As4 and H2 ambient for 20 min at 830 and at 860 °C. Differences observed between capless and SiO2-encapsulated annealing methods include the position and activation of net donor concentration peaks, the gradient of the leading edge of the profiles, and mobilities. An explanation of these differences is provided using a Cr redistribution model and a charge neutrality equation where this complex electrical behavior cannot be explained solely by the implanted impurity atoms and thermal diffusion effects.

Original languageEnglish (US)
Pages (from-to)2990-2993
Number of pages4
JournalJournal of Applied Physics
Volume52
Issue number4
DOIs
StatePublished - Dec 1 1981
Externally publishedYes

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thermal diffusion
leading edges
profiles
carrier mobility
caps
activation
conduction
impurities
gradients
annealing
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless. / Feng, M.; Kwok, S. P.; Eu, V.; Henderson, B. W.

In: Journal of Applied Physics, Vol. 52, No. 4, 01.12.1981, p. 2990-2993.

Research output: Contribution to journalArticle

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