Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies

James Di Sarro; Kiran Chatty; Robert Gauthier; Elyse Rosenbaum

doi:10.1109/RELPHY.2006.251210

Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies

James Di Sarro, Kiran Chatty, Robert Gauthier, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We explore the effect of layout factors on the turn-on time of Silicon Controlled Rectifiers (SCRs) in 90nm and 65nm bulk CMOS technologies. Using a Very Fast Transmission Line Pulse (VFTLP) tester, we show that a SCR in 65nm bulk CMOS technology can achieve a turn-on time of 500ps with proper design. Using device simulations, we identify factors limiting SCR turn-on time and provide a basis for the presented experimental results.

Original language	English (US)
Title of host publication	2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages	163-168
Number of pages	6
DOIs	https://doi.org/10.1109/RELPHY.2006.251210
State	Published - 2006
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States Duration: Mar 26 2006 → Mar 30 2006

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country/Territory	United States
City	San Jose, CA
Period	3/26/06 → 3/30/06

Keywords

ESD protection circuits
Electrostatic discharge (ESD)
Silicon Controlled Rectifier (SCR)

ASJC Scopus subject areas

General Engineering

Online availability

10.1109/RELPHY.2006.251210

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Sarro, J. D., Chatty, K., Gauthier, R., & Rosenbaum, E. (2006). Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual (pp. 163-168). Article 4017151 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251210

Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies. / Sarro, James Di; Chatty, Kiran; Gauthier, Robert et al.
2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 163-168 4017151 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sarro, JD, Chatty, K, Gauthier, R & Rosenbaum, E 2006, Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies. in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017151, IEEE International Reliability Physics Symposium Proceedings, pp. 163-168, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 3/26/06. https://doi.org/10.1109/RELPHY.2006.251210

Sarro JD, Chatty K, Gauthier R, Rosenbaum E. Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 163-168. 4017151. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2006.251210

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Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies

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