Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere

M. Feng, V. Eu, H. Kanber, W. B. Henderson

Research output: Contribution to journalArticle

Abstract

We compare the chemical distribution of Cr, Mn, Fe and Si and electrical profiles in implanted semi-insulating substrates annealed with and without a SiO2 encapsulant in a H2-AS4 atmosphere. The implantation energy and dose are appropriate for medium power FET applications. Excellent correlation between electrical and chemical profiles have been obtained from charge neutrality considerations. Mn and Cr chemical redistribution profiles are studied as a function of annealing temperature. The Hall mobilities at liquid nitrogen temperature are correlated to the NAND ratio for different methods of annealing.

Original languageEnglish (US)
Pages (from-to)973-986
Number of pages14
JournalJournal of Electronic Materials
Volume10
Issue number6
DOIs
StatePublished - Nov 1 1981
Externally publishedYes

Keywords

  • Impurity Redistribution in GaAs Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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