Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere

M. Feng; V. Eu; H. Kanber; W. B. Henderson

doi:10.1007/BF02661187

Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO₂ in an H₂-AS₄ atmosphere

M. Feng, V. Eu, H. Kanber, W. B. Henderson

Research output: Contribution to journal › Article › peer-review

Abstract

We compare the chemical distribution of Cr, Mn, Fe and Si and electrical profiles in implanted semi-insulating substrates annealed with and without a SiO₂ encapsulant in a H₂-AS₄ atmosphere. The implantation energy and dose are appropriate for medium power FET applications. Excellent correlation between electrical and chemical profiles have been obtained from charge neutrality considerations. Mn and Cr chemical redistribution profiles are studied as a function of annealing temperature. The Hall mobilities at liquid nitrogen temperature are correlated to the N_AN_D ratio for different methods of annealing.

Original language	English (US)
Pages (from-to)	973-986
Number of pages	14
Journal	Journal of Electronic Materials
Volume	10
Issue number	6
DOIs	https://doi.org/10.1007/BF02661187
State	Published - Nov 1981
Externally published	Yes

Keywords

Impurity Redistribution in GaAs Substrates

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1007/BF02661187

Library availability

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Cite this

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abstract = "We compare the chemical distribution of Cr, Mn, Fe and Si and electrical profiles in implanted semi-insulating substrates annealed with and without a SiO2 encapsulant in a H2-AS4 atmosphere. The implantation energy and dose are appropriate for medium power FET applications. Excellent correlation between electrical and chemical profiles have been obtained from charge neutrality considerations. Mn and Cr chemical redistribution profiles are studied as a function of annealing temperature. The Hall mobilities at liquid nitrogen temperature are correlated to the NAND ratio for different methods of annealing.",

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AU - Feng, M.

AU - Eu, V.

AU - Kanber, H.

AU - Henderson, W. B.

PY - 1981/11

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N2 - We compare the chemical distribution of Cr, Mn, Fe and Si and electrical profiles in implanted semi-insulating substrates annealed with and without a SiO2 encapsulant in a H2-AS4 atmosphere. The implantation energy and dose are appropriate for medium power FET applications. Excellent correlation between electrical and chemical profiles have been obtained from charge neutrality considerations. Mn and Cr chemical redistribution profiles are studied as a function of annealing temperature. The Hall mobilities at liquid nitrogen temperature are correlated to the NAND ratio for different methods of annealing.

AB - We compare the chemical distribution of Cr, Mn, Fe and Si and electrical profiles in implanted semi-insulating substrates annealed with and without a SiO2 encapsulant in a H2-AS4 atmosphere. The implantation energy and dose are appropriate for medium power FET applications. Excellent correlation between electrical and chemical profiles have been obtained from charge neutrality considerations. Mn and Cr chemical redistribution profiles are studied as a function of annealing temperature. The Hall mobilities at liquid nitrogen temperature are correlated to the NAND ratio for different methods of annealing.

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