Study of broadband cryogenic DC-Contact RF MEMS switches

Songbin Gong, Hui Shen, N. Scott Barker

Research output: Contribution to journalArticle

Abstract

Adielectric-free DC-contact RFmicroelectromechanical system (MEMS) switch is designed and tested at room temperature and cryogenic temperatures. The switch demonstrates a 1-Ω contact resistance and 2 fF up-state capacitance at room temperature, with an insertion-loss less than 0.4 dB up to 50 GHz and less than 0.9 dB up to 75 GHz. The isolation is better than 24 dB up to 50 GHz and 18 dB up to 75 GHz at room temperature. At a cryogenic temperature of 1.6 K, the switch has an insertion loss less than 0.6 dB with isolation better than 24 dB up to 50 GHz. The effects of cryogenic temperatures on deformation of the cantilever beam, actuation voltage, and RF performance have been noted. The theoretical and experimental results of the switch performance are presented and compared.

Original languageEnglish (US)
Article number5337897
Pages (from-to)3442-3449
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume57
Issue number12
DOIs
StatePublished - Dec 1 2009

Keywords

  • Broadband
  • Cantilever
  • Contact resistance
  • Cryogenic
  • DC-contact
  • Low loss
  • MEMS
  • Series switch

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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