Yi Ching Lin, Ilesanmi Adesida, Andrew R. Neureuther

Research output: Contribution to conferencePaperpeer-review


High quality alignment signals are required in electron lithography. The Monte Carlo method is used to study the alignment signals formed by electrons that are backscattered from tapered etched silicon marks. Effects of mark geometry and incident beam voltage are explored. Universal curves of the contrast and the average signal slope are obtained. The results indicate that although a step of depth greater than 40% of the Bethe range of the primary beam yields a better contrast, too large a step will result in the decrease of the average slope. The quality of the alignment signal can be improved if the detector is positioned to collect the backscattered electrons with small takeoff angles. The sum and difference signals from detectors in different azimuthal angles are examined. The results show that in detecting a topographical discontinuity, the difference signal is preferred rather than the sum signal. Experimental confirmation of the theoretical predictions shows good agreement with the universal curve of contrast versus the normalized step depth. The alignment marks were fabricated by using anisotropic etching techniques in silicon.

Original languageEnglish (US)
Number of pages10
StatePublished - 1980
EventProc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf - St Louis, MO, USA
Duration: May 11 1980May 16 1980


ConferenceProc on the Symp on Electron and Ion Beam Sci and Technol, 9th Int Conf
CitySt Louis, MO, USA

ASJC Scopus subject areas

  • Engineering(all)


Dive into the research topics of 'STUDY OF ALIGNMENT SIGNALS FOR ELECTRON LITHOGRAPHY.'. Together they form a unique fingerprint.

Cite this