Abstract
In this work, circuit-level simulation is conducted for a typical two-stage protection circuit. We demonstrate that the circuit failure mechanism is correctly predicted by simulation. Furthermore, the current protection levels estimated by simulation are in good agreement with the experiments; therefore, circuit-level simulation can be used to predict the HBM-ESD protection level. In addition, the failure site is explained by simulation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 333-338 |
| Number of pages | 6 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| State | Published - 1997 |
| Event | Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA Duration: Apr 8 1997 → Apr 10 1997 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality