Study of 1/f and 1/f2 noise for InP DHBT

Kurt Cimino, Yue Ming Hsin, S. C. Shen, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.

Original languageEnglish (US)
Title of host publication2005 International Conference on Compound Semiconductor Manufacturing Technology
StatePublished - 2005
Event2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 - New Orleans, LA, United States
Duration: Apr 11 2005Apr 14 2005

Publication series

Name2005 International Conference on Compound Semiconductor Manufacturing Technology

Other

Other2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
Country/TerritoryUnited States
CityNew Orleans, LA
Period4/11/054/14/05

Keywords

  • 1/f
  • 1/f
  • HBT
  • Noise

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Study of 1/f and 1/f2 noise for InP DHBT'. Together they form a unique fingerprint.

Cite this