@inproceedings{c5020789a5d7467a8b47477dc508300d,
title = "Structure and stability of alternative gate dielectrics for Si CMOS",
abstract = "A number of binary oxides and their alloys with SiO2 ({"}silicates{"}) and Al2O3 ({"}aiuminates{"}), respectively, that have been predicted to be thermodynamically stable in contact with Si are candidates to replace SiO2 in CMOS. However, reactions leading to the formation of interfacial layers have been reported when these oxides are exposed to high temperatures during device processing. Furthermore, Hf- and Zr-silicate films are reported to phase separate into a crystalline HfO2 or ZrO2-rich phase embedded in an amorphous, silica-rich matrix. We will present experimental studies and thermodynamic calculations of both interfacial reactions and phase separation.",
author = "Snsanne Stemmer and Yan Yang and Youli Li and Brendan Foran and Lysaght, {Patrick S.} and Gisby, {John A.} and Taylor, {Jeff R.} and Streiffer, {Stephen K.} and Paul Fuoss and Soenke Seifert and Wenjuan Zhu and Ma, {T. P.}",
year = "2003",
doi = "10.1109/ISDRS.2003.1271995",
language = "English (US)",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "60--61",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "United States",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}