Structure and Morphology of Microprotrusions Grown on Ar-Sputtered InP

R. P. Southwell, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


The adsorption/desorption kinetics of TiCl4on polycrystalline TiSi2have been measured quantitatively by temperature-programmed desorption in order to better understand the chemical vapor deposition of the silicide from TiCl4and SiH4. For small exposures, only SiCl2desorbs near 1150 K. The kinetics are second order with respect to surface chlorine, and the desorption activation energy Edis 85±4 kcal/mol. As this state approaches saturation, SiCl2desorbs from a second state near 700 K. The kinetics are also second order, but desorption occurs through a continuum of energetic pathways peaking at 57 kcal/mol. As this state saturates, a third desorption peak consisting of SiCl4appears near 500 K. The kinetics are first order with respect to surface chlorine and also comprise a distribution of energetic pathways, which peak at 33 kcal/mol. Coadsorption studies with SiH4were also performed. Surface chlorine appears to bond to Si, not Ti, on the surface. These kinetics are utilized to predictively model the chemical vapor deposition of TiSi2thin films.

Original languageEnglish (US)
Pages (from-to)221-229
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
StatePublished - Mar 1995

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Structure and Morphology of Microprotrusions Grown on Ar-Sputtered InP'. Together they form a unique fingerprint.

Cite this