STRUCTURAL STUDIES OF AN InAs-GaAs SUPERLATTICE ALLOY.

M. C. Tamargo, R. Hull, Laura Greene, J. R. Hayes, N. Tabatabaie, A. Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin alternating layers of InAs and GaAs have been grown by MBE on buffer layers lattice matched to InP. The layer structure was evaluated by transmission electron microscopy (TEM) and low angle X-ray scattering. Commensurate epitaxial layers approximately 15 Angstrom thick were obtained in spite of the large lattice mismatch (7%). These results and their implication for growth conditions of strained-layer superlattices will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsCarolyn Rubin Aita, K.S. SreeHarsha
PublisherMaterials Research Soc
Pages271-275
Number of pages5
ISBN (Print)093183712X
StatePublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume47
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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