TY - JOUR
T1 - Structural properties of AlN grown on sapphire at plasma self-heating conditions using reactive magnetron sputter deposition
AU - Seo, Hui Chan
AU - Petrov, Ivan
AU - Kim, Kyekyoon
N1 - Funding Information:
Illinois Frederick Seitz Materials Research Laboratory (FS-MRL), the Research Board and Grainger Center for Electric Machinery and Electromechanics of the University of Illinois, and Northrop– Grumman Space Technologies. The authors appreciate the use of the facilities of the FS-MRL Center for Microanalysis of Materials at the University of Illinois, which is partially supported by DOE. Taekyung Kim is acknowledged for his technical assistance in the TEM analysis.
Funding Information:
This work was supported in part by DARPA HR0011-10-1-0050 through the University of
PY - 2010/8
Y1 - 2010/8
N2 - Aluminum nitride (AlN) films were grown on sapphire by reactive magnetron sputter deposition in N 2 discharges at plasma self-heating conditions. The growth temperature was as low as 94°C. The structural properties resulting from different substrate biases and growth pressures were investigated by atomic force microscopy, x-ray diffraction (XRD) measurements, and transmission electron microscopy (TEM). At 20 mTorr of N 2 withmost sputtered species thermalized, films exhibited both AlN (0002) and (1011) XRD peaks, with the AlN (0002) intensity initially increasing with ion energy above 15 eV, showing enhanced film quality with an optimum of 25 eV. At a lower growth pressure of 5 mTorr with energetic sputtered species, the AlN (1011) peak disappeared and the crystallinity of AlN improved, exhibiting relaxed epitaxial AlN. The measured lattice parameter was 0.4975 nm, which was 0.10% smaller than that of bulk. The epitaxial relationship of a single-crystal AlN film was confirmed by pole figure and cross-sectional TEM. These results demonstrate that control of ion energy and energy of the sputter-deposited species is critical for film deposition at low temperature.
AB - Aluminum nitride (AlN) films were grown on sapphire by reactive magnetron sputter deposition in N 2 discharges at plasma self-heating conditions. The growth temperature was as low as 94°C. The structural properties resulting from different substrate biases and growth pressures were investigated by atomic force microscopy, x-ray diffraction (XRD) measurements, and transmission electron microscopy (TEM). At 20 mTorr of N 2 withmost sputtered species thermalized, films exhibited both AlN (0002) and (1011) XRD peaks, with the AlN (0002) intensity initially increasing with ion energy above 15 eV, showing enhanced film quality with an optimum of 25 eV. At a lower growth pressure of 5 mTorr with energetic sputtered species, the AlN (1011) peak disappeared and the crystallinity of AlN improved, exhibiting relaxed epitaxial AlN. The measured lattice parameter was 0.4975 nm, which was 0.10% smaller than that of bulk. The epitaxial relationship of a single-crystal AlN film was confirmed by pole figure and cross-sectional TEM. These results demonstrate that control of ion energy and energy of the sputter-deposited species is critical for film deposition at low temperature.
KW - Aluminum nitride
KW - Self-heating condition
KW - Sputter deposition
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U2 - 10.1007/s11664-010-1275-4
DO - 10.1007/s11664-010-1275-4
M3 - Article
AN - SCOPUS:77954623177
SN - 0361-5235
VL - 39
SP - 1146
EP - 1151
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 8
ER -