Structural properties of AlN grown on sapphire at plasma self-heating conditions using reactive magnetron sputter deposition

Hui Chan Seo, Ivan Petrov, Kyekyoon Kim

Research output: Contribution to journalArticle

Abstract

Aluminum nitride (AlN) films were grown on sapphire by reactive magnetron sputter deposition in N 2 discharges at plasma self-heating conditions. The growth temperature was as low as 94°C. The structural properties resulting from different substrate biases and growth pressures were investigated by atomic force microscopy, x-ray diffraction (XRD) measurements, and transmission electron microscopy (TEM). At 20 mTorr of N 2 withmost sputtered species thermalized, films exhibited both AlN (0002) and (1011) XRD peaks, with the AlN (0002) intensity initially increasing with ion energy above 15 eV, showing enhanced film quality with an optimum of 25 eV. At a lower growth pressure of 5 mTorr with energetic sputtered species, the AlN (1011) peak disappeared and the crystallinity of AlN improved, exhibiting relaxed epitaxial AlN. The measured lattice parameter was 0.4975 nm, which was 0.10% smaller than that of bulk. The epitaxial relationship of a single-crystal AlN film was confirmed by pole figure and cross-sectional TEM. These results demonstrate that control of ion energy and energy of the sputter-deposited species is critical for film deposition at low temperature.

Original languageEnglish (US)
Pages (from-to)1146-1151
Number of pages6
JournalJournal of Electronic Materials
Volume39
Issue number8
DOIs
StatePublished - Aug 1 2010

Keywords

  • Aluminum nitride
  • Self-heating condition
  • Sputter deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Structural properties of AlN grown on sapphire at plasma self-heating conditions using reactive magnetron sputter deposition'. Together they form a unique fingerprint.

  • Cite this