Structural investigation of electrochemically etched silicon

B. J. Heuser, S. Spooner, C. J. Glinka, D. L. Gilliam, N. A. Winslow, M. S. Boley

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Small-angle neutron scattering (SANS) measurements of four electrochemically etched, porous silicon (PS) samples have been performed over a wide wavevector transfer (Q) range. The intermediate to high Q results can be modeled with a non-particulate, random phase model. Correlation length scales on the order of 1 to 2 nm thought to characterize the PS skeleton have been deduced from the SANS data. The microstructural anisotropy was studied tilting two of the samples with respect to the neutron beam. These samples exhibited an asymmetric scattering pattern at intermediate Q(0.1≤Q≤0.6 nm-1) in this condition. Photoluminescence spectra from all four samples have been recorded as well. A correlation appears to exist between the SANS and photoluminescence measurements. An x-ray diffraction measurement of one sample demonstrates that the PS layer retains the silicon lattice structure. Significant peak broadening is observed that we interpreted as a quasi-particle size effect. The PS particle size calculated from the x-ray diffraction measurement is equal to the correlation length obtained in the SANS measurement.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558991786
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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