We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1998|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)