Structural disorder induced in hydrogenated amorphous silicon by light soaking

J. M. Gibson; M. M.J. Treacy; P. M. Voyles; H. C. Jin; J. R. Abelson

doi:10.1063/1.122683

Structural disorder induced in hydrogenated amorphous silicon by light soaking

J. M. Gibson, M. M.J. Treacy, P. M. Voyles, H. C. Jin, J. R. Abelson

Research output: Contribution to journal › Article › peer-review

Abstract

We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.

Original language	English (US)
Pages (from-to)	3093-3095
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	21
DOIs	https://doi.org/10.1063/1.122683
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122683

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abstract = "We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.",

author = "Gibson, {J. M.} and Treacy, {M. M.J.} and Voyles, {P. M.} and Jin, {H. C.} and Abelson, {J. R.}",

year = "1998",

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AU - Jin, H. C.

AU - Abelson, J. R.

PY - 1998

Y1 - 1998

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AB - We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler-Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.

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Structural disorder induced in hydrogenated amorphous silicon by light soaking

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