Structural and optical properties of cubic GaN on U-grooved Si (100)

Keyphrases

• Optical Properties 100%
• Si(111) 100%
• Structural Properties 100%
• Cubic GaN 100%
• Internal Quantum Efficiency 33%
• Hexagonal Phase 33%
• Band-edge Emission 33%
• Low Temperature 16%
• Silica 16%
• Metal-organic Chemical Vapor Deposition (MOCVD) 16%
• Sidewall 16%
• Transmission Electron Microscopy 16%
• Atomic Force 16%
• As-grown 16%
• Radiative Recombination 16%
• Electron Microscopy Studies 16%
• Structural Quality 16%
• AlN Buffer Layer 16%
• Threading Dislocation 16%
• Optical Quality 16%
• Temperature-dependent Photoluminescence 16%
• Photoluminescence Studies 16%
• Selective Etching 16%
• Stacking Fault Density 16%
• Recombination Lifetime 16%
• Next-generation Devices 16%
• GaN Epitaxy 16%

Engineering

• Band Edge 100%
• Internal Quantum Efficiency 100%
• Low-Temperature 50%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Side Wall 50%
• Buffer Layer 50%
• Radiative Recombination 50%
• Threading Dislocation 50%
• Selective Etching 50%
• Optical Quality 50%
• Recombination Lifetime 50%
• Generation Device 50%
• Silicon Dioxide 50%

Material Science

• Optical Property 100%
• Silicon 100%
• Density 50%
• Chemical Vapor Deposition 50%
• Transmission Electron Microscopy 50%
• Buffer Layer 50%
• Photoluminescence 50%
• Epitaxy 50%
• Aluminum Nitride 50%
• Crystal Defect 50%