Mn-doped anatase TiO2 (Mn: 1.2, 2.4 at%) thin films were grown on Si(100) via atomic layer deposition (ALD). The synthesis utilized Ti(OCH(CH3)2)4 and H2O as ALD precursors and Mn(DPM)3 as a dopant source. Xray photoelectron spectroscopy measurements indicate that Mn is successfully doped in the TiO 2 matrix and reveal information about film composition and elemental chemical states. Microstructure, crystallinity, and density were investigated with scanning electron microscopy, X-ray diffraction, and X-ray reflectivity. All ALD-synthesized films exhibited room-temperature ferromagnetism; the microstructure, density, and magnetic field-dependent magnetization of the TiO2 varied with the concentration of Mn. ALD permits precise composition and thickness control, and much higher process throughput compared to alternative techniques.
|Original language||English (US)|
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Aug 1 2011|
ASJC Scopus subject areas
- Materials Science(all)