TY - JOUR
T1 - Structural and magnetic properties of Mn-doped anatase TiO2 films synthesized by atomic layer deposition
AU - Sellers, Meredith C.K.
AU - Seebauer, Edmund G.
PY - 2011/8
Y1 - 2011/8
N2 - Mn-doped anatase TiO2 (Mn: 1.2, 2.4 at%) thin films were grown on Si(100) via atomic layer deposition (ALD). The synthesis utilized Ti(OCH(CH3)2)4 and H2O as ALD precursors and Mn(DPM)3 as a dopant source. Xray photoelectron spectroscopy measurements indicate that Mn is successfully doped in the TiO 2 matrix and reveal information about film composition and elemental chemical states. Microstructure, crystallinity, and density were investigated with scanning electron microscopy, X-ray diffraction, and X-ray reflectivity. All ALD-synthesized films exhibited room-temperature ferromagnetism; the microstructure, density, and magnetic field-dependent magnetization of the TiO2 varied with the concentration of Mn. ALD permits precise composition and thickness control, and much higher process throughput compared to alternative techniques.
AB - Mn-doped anatase TiO2 (Mn: 1.2, 2.4 at%) thin films were grown on Si(100) via atomic layer deposition (ALD). The synthesis utilized Ti(OCH(CH3)2)4 and H2O as ALD precursors and Mn(DPM)3 as a dopant source. Xray photoelectron spectroscopy measurements indicate that Mn is successfully doped in the TiO 2 matrix and reveal information about film composition and elemental chemical states. Microstructure, crystallinity, and density were investigated with scanning electron microscopy, X-ray diffraction, and X-ray reflectivity. All ALD-synthesized films exhibited room-temperature ferromagnetism; the microstructure, density, and magnetic field-dependent magnetization of the TiO2 varied with the concentration of Mn. ALD permits precise composition and thickness control, and much higher process throughput compared to alternative techniques.
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U2 - 10.1007/s00339-011-6308-1
DO - 10.1007/s00339-011-6308-1
M3 - Article
AN - SCOPUS:80052498557
SN - 0947-8396
VL - 104
SP - 583
EP - 586
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 2
ER -