Stripe-geometry AlxGa1-xAs-GaAs quantum well lasers via hydrogenation

G. S. Jackson, N. Pan, M. S. Feng, G. E. Stillman, N. Holonyak, R. D. Burnham

Research output: Contribution to journalArticlepeer-review


Data are presented on stripe-geometry gain-guided AlxGa 1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (]]hydrogenation") of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation]] undercutting" of the oxide mask.

Original languageEnglish (US)
Pages (from-to)1629-1631
Number of pages3
JournalApplied Physics Letters
Issue number20
StatePublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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