Data are presented on stripe-geometry gain-guided AlxGa 1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (]]hydrogenation") of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation]] undercutting" of the oxide mask.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1987|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)