Stripe-geometry AlxGa1-xAs-GaAs quantum well lasers via hydrogenation

G. S. Jackson; N. Pan; M. S. Feng; G. E. Stillman; N. Holonyak; R. D. Burnham

doi:10.1063/1.98577

Stripe-geometry Al_xGa_1-xAs-GaAs quantum well lasers via hydrogenation

G. S. Jackson, N. Pan, M. S. Feng, G. E. Stillman, N. Holonyak, R. D. Burnham

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on stripe-geometry gain-guided Al_xGa _1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO₂) hydrogen compensation (]]hydrogenation") of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation]] undercutting" of the oxide mask.

Original language	English (US)
Pages (from-to)	1629-1631
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	20
DOIs	https://doi.org/10.1063/1.98577
State	Published - 1987

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.98577

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Cite this

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title = "Stripe-geometry AlxGa1-xAs-GaAs quantum well lasers via hydrogenation",

abstract = "Data are presented on stripe-geometry gain-guided AlxGa 1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (]]hydrogenation{"}) of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation]] undercutting{"} of the oxide mask.",

author = "Jackson, {G. S.} and N. Pan and Feng, {M. S.} and Stillman, {G. E.} and N. Holonyak and Burnham, {R. D.}",

year = "1987",

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language = "English (US)",

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pages = "1629--1631",

journal = "Applied Physics Letters",

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T1 - Stripe-geometry AlxGa1-xAs-GaAs quantum well lasers via hydrogenation

AU - Jackson, G. S.

AU - Pan, N.

AU - Feng, M. S.

AU - Stillman, G. E.

AU - Holonyak, N.

AU - Burnham, R. D.

PY - 1987

Y1 - 1987

N2 - Data are presented on stripe-geometry gain-guided AlxGa 1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (]]hydrogenation") of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation]] undercutting" of the oxide mask.

AB - Data are presented on stripe-geometry gain-guided AlxGa 1-xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (]]hydrogenation") of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation]] undercutting" of the oxide mask.

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