Abstract
Two-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel and characterized them with Raman spectroscopy and transport measurements. The 2D S-TFTs had initial mobility of 4.9 ± 0.7 cm2/(V s). The wrinkling reduced the strain transferred into the 2D materials by a factor of 50, allowing a substrate stretch of up to 23% that could be cycled thousands of times without electrical degradation. The stretch did not alter the mobility but did lead to strain-induced threshold voltage shifts by ΔVT = −1.9 V. These 2D S-TFTs form the foundation for stretchable integrated circuits and enable investigations of the impact of heterogeneous strain on electron transport.
Original language | English (US) |
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Pages (from-to) | 1454-1461 |
Number of pages | 8 |
Journal | Nano letters |
Volume | 24 |
Issue number | 4 |
Early online date | Jan 12 2024 |
DOIs | |
State | Published - Jan 31 2024 |
Keywords
- 2D heterstructures
- 2D materials
- buckling engineering
- stretchable electronics
- transistors
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering
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Stretchable thin-film transistors based on wrinkled graphene and MoS2 heterostructures
Kim, H. (Creator), Zhao, H. (Creator) & van der Zande, A. (Creator), University of Illinois Urbana-Champaign, Jan 4 2024
DOI: 10.13012/B2IDB-7325893_V1
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