Stretchable Thin-Film Transistors Based on Wrinkled Graphene and MoS2 Heterostructures

Hyunchul Kim, He Lin Zhao, Arend M. van der Zande

Research output: Contribution to journalArticlepeer-review


Two-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel and characterized them with Raman spectroscopy and transport measurements. The 2D S-TFTs had initial mobility of 4.9 ± 0.7 cm2/(V s). The wrinkling reduced the strain transferred into the 2D materials by a factor of 50, allowing a substrate stretch of up to 23% that could be cycled thousands of times without electrical degradation. The stretch did not alter the mobility but did lead to strain-induced threshold voltage shifts by ΔVT = −1.9 V. These 2D S-TFTs form the foundation for stretchable integrated circuits and enable investigations of the impact of heterogeneous strain on electron transport.

Original languageEnglish (US)
Pages (from-to)1454-1461
Number of pages8
JournalNano letters
Issue number4
Early online dateJan 12 2024
StatePublished - Jan 31 2024


  • 2D heterstructures
  • 2D materials
  • buckling engineering
  • stretchable electronics
  • transistors

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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