Stretchable field-effect-transistor array of suspended SnO2 nanowires

Gunchul Shin; Chang Hoon Yoon; Min Young Bae; Yoon Chul Kim; Sahng Ki Hong; John A. Rogers; Jeong Sook Ha

doi:10.1002/smll.201100116

Stretchable field-effect-transistor array of suspended SnO₂ nanowires

Gunchul Shin, Chang Hoon Yoon, Min Young Bae, Yoon Chul Kim, Sahng Ki Hong, John A. Rogers, Jeong Sook Ha

Research output: Contribution to journal › Article › peer-review

Abstract

Stretchable device systems with suspended SnO₂ nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field-effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field-effect transistors is maintained under stretching up to approximately 40%.

Original language	English (US)
Pages (from-to)	1181-1185
Number of pages	5
Journal	Small
Volume	7
Issue number	9
DOIs	https://doi.org/10.1002/smll.201100116
State	Published - May 9 2011
Externally published	Yes

Keywords

field-effect transistors
nanotechnology
nanowires
stretchable devices
suspended nanowires

ASJC Scopus subject areas

Biomaterials
Engineering (miscellaneous)
Biotechnology
General Medicine

Online availability

10.1002/smll.201100116

Library availability

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Cite this

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abstract = "Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field-effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field-effect transistors is maintained under stretching up to approximately 40%.",

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