Stress-induced wrinkling of sputtered SiO 2 films on polymethylmethacrylate

Justin R. Serrano; Qinqin Xu; David G. Cahill

doi:10.1116/1.2171711

Stress-induced wrinkling of sputtered SiO ₂ films on polymethylmethacrylate

Justin R. Serrano, Qinqin Xu, David G. Cahill

Research output: Contribution to journal › Article › peer-review

Abstract

Compressively stressed SiO2 films are deposited by rf magnetron sputtering onto polymethylmethacrylate- (PMMA) coated Si substrates. The oxide film roughens by wrinkling during deposition; wrinkling is enabled by the viscous flow of the PMMA layer. The nanoscale lateral length scale of the wrinkling, ∼120 nm, is established during the first few nanometers of film deposition and is controlled by the thickness and stress of the SiO2 film at the onset of the instability. Continued deposition of SiO2 leads to a rapid increase and then saturation of the rms roughness at ∼5 nm.

Original language	English (US)
Pages (from-to)	324-327
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	24
Issue number	2
DOIs	https://doi.org/10.1116/1.2171711
State	Published - Mar 2006
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Online availability

10.1116/1.2171711

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Cite this

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title = "Stress-induced wrinkling of sputtered SiO 2 films on polymethylmethacrylate",

abstract = "Compressively stressed SiO2 films are deposited by rf magnetron sputtering onto polymethylmethacrylate- (PMMA) coated Si substrates. The oxide film roughens by wrinkling during deposition; wrinkling is enabled by the viscous flow of the PMMA layer. The nanoscale lateral length scale of the wrinkling, ∼120 nm, is established during the first few nanometers of film deposition and is controlled by the thickness and stress of the SiO2 film at the onset of the instability. Continued deposition of SiO2 leads to a rapid increase and then saturation of the rms roughness at ∼5 nm.",

author = "Serrano, {Justin R.} and Qinqin Xu and Cahill, {David G.}",

note = "Funding Information: The authors thank Xijing Zhang for assistance with the stress measurements of the thin films. This work was supported by the U.S. National Science Foundation Grant No. DMR-0419840 and by the U.S. Department of Energy Grant No. DEFG02-91-ER45439 through the University of Illinois Materials Research Laboratory. Sample characterization by AFM was carried out in the Center for Microanalysis of Materials at the University of Illinois which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. ",

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AU - Cahill, David G.

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AB - Compressively stressed SiO2 films are deposited by rf magnetron sputtering onto polymethylmethacrylate- (PMMA) coated Si substrates. The oxide film roughens by wrinkling during deposition; wrinkling is enabled by the viscous flow of the PMMA layer. The nanoscale lateral length scale of the wrinkling, ∼120 nm, is established during the first few nanometers of film deposition and is controlled by the thickness and stress of the SiO2 film at the onset of the instability. Continued deposition of SiO2 leads to a rapid increase and then saturation of the rms roughness at ∼5 nm.

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