Stress-induced anisotropic diffusion in alloys: Complex Si solute flow near a dislocation core in Ni

Thomas Garnier, Venkateswara R. Manga, Dallas R. Trinkle, Maylise Nastar, Pascal Bellon

Research output: Contribution to journalArticlepeer-review

Abstract

Stress introduces anisotropy in the transport coefficients in materials, affecting diffusion. Using first-principles quantum-mechanical methods for activation barriers of atomic jumps, combined with the extended self-consistent mean-field theory to compute transport coefficients with strain-reduced symmetry, we predict significant stress-induced anisotropy for Si impurity diffusion in nickel. This causes complex spatial- and temperature-dependent fluxes; as an example, the heterogenous strain field of a dislocation creates unusual flow patterns that affect mechanical and segregation behavior.

Original languageEnglish (US)
Article number134108
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number13
DOIs
StatePublished - Oct 25 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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