Stress free wafer bonded GaAs-on-Si photonic devices and circuits

Yu Hwa Lo, Yanyan Xiong, Y. Zhou, Z. H. Zhu, A. A. Allerman, T. Hargett, R. Sieg, K. D. Choquette

Research output: Contribution to journalConference articlepeer-review


A low temperature bonding technique is proposed to solve the stress problem in the fusion bonding of GaAs device material to a Si substrate. The low temperature bonding process of a GaAs vertical cavity surface emitting laser (VCSEL) wafer began with chemical mechanical polishing (CMP) of the GaAs wafer to acquire a smooth surface morphology. Bonded GaAs/Si dummy samples were intentionally heated to a high temperature without GaAs substrate removal. When all parameters were optimized, debonding was not observed even at a temperature as high as 900 °C.

Original languageEnglish (US)
Pages (from-to)427-428
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA
Duration: Nov 8 1999Nov 11 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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