Abstract
A low temperature bonding technique is proposed to solve the stress problem in the fusion bonding of GaAs device material to a Si substrate. The low temperature bonding process of a GaAs vertical cavity surface emitting laser (VCSEL) wafer began with chemical mechanical polishing (CMP) of the GaAs wafer to acquire a smooth surface morphology. Bonded GaAs/Si dummy samples were intentionally heated to a high temperature without GaAs substrate removal. When all parameters were optimized, debonding was not observed even at a temperature as high as 900 °C.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 427-428 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: Nov 8 1999 → Nov 11 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering