Low temperature ion bombardment of initially crystalline, defect-free silicon with 700 eV ion beam energy creates a highly-damaged stressed layer a few nanometers thick on the surface. An apparent steady state in structure is achieved at a fluence of 2 × 1014-3 × 1014 ions/cm2. In this work, the stresses are computed using the interatomic force definition of stress. The stress evolution is studied as a function of argon implantation into the target. Stress per implanted argon atom is observed to reach a nearly constant value between 20 MPa and 25 MPa at a fluence of 1.2 × 1014 ions/cm2.

Original languageEnglish (US)
Pages (from-to)50-56
Number of pages7
JournalMechanics Research Communications
Issue number1-2
StatePublished - Jan 1 2008


  • Atomistic stress
  • Ion bombardment
  • Stress evolution

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials

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