Abstract

Low temperature ion bombardment of initially crystalline, defect-free silicon with 700 eV ion beam energy creates a highly-damaged stressed layer a few nanometers thick on the surface. An apparent steady state in structure is achieved at a fluence of 2 × 1014-3 × 1014 ions/cm2. In this work, the stresses are computed using the interatomic force definition of stress. The stress evolution is studied as a function of argon implantation into the target. Stress per implanted argon atom is observed to reach a nearly constant value between 20 MPa and 25 MPa at a fluence of 1.2 × 1014 ions/cm2.

Original languageEnglish (US)
Pages (from-to)50-56
Number of pages7
JournalMechanics Research Communications
Volume35
Issue number1-2
DOIs
StatePublished - Jan 1 2008

Fingerprint

Silicon
Ion bombardment
bombardment
Argon
silicon
fluence
ions
argon
Ions
interatomic forces
Ion beams
implantation
ion beams
Crystalline materials
Atoms
Defects
defects
atoms
Temperature
energy

Keywords

  • Atomistic stress
  • Ion bombardment
  • Stress evolution

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Stress evolution to steady state in ion bombardment of silicon. / Kalyanasundaram, Nagarajan; Wood, Molly; Freund, Jonathan B.; Johnson, H. T.

In: Mechanics Research Communications, Vol. 35, No. 1-2, 01.01.2008, p. 50-56.

Research output: Contribution to journalArticle

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AB - Low temperature ion bombardment of initially crystalline, defect-free silicon with 700 eV ion beam energy creates a highly-damaged stressed layer a few nanometers thick on the surface. An apparent steady state in structure is achieved at a fluence of 2 × 1014-3 × 1014 ions/cm2. In this work, the stresses are computed using the interatomic force definition of stress. The stress evolution is studied as a function of argon implantation into the target. Stress per implanted argon atom is observed to reach a nearly constant value between 20 MPa and 25 MPa at a fluence of 1.2 × 1014 ions/cm2.

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