Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images

Maryam Vatanparast, Per Erik Vullum, Magnus Nord, Jian Min Zuo, Turid W. Reenaas, Randi Holmestad

Research output: Contribution to journalConference article

Abstract

Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum dot materials. In this work, GPA has been applied to high resolution Z-contrast scanning transmission electron microscopy (STEM) images. Strain maps determined from different g vectors of these images are compared to each other, in order to analyze and assess the GPA technique in terms of accuracy. The SmartAlign tool has been used to improve the STEM image quality getting more reliable results. Strain maps from template matching as a real space approach are compared with strain maps from GPA, and it is discussed that a real space analysis is a better approach than GPA for aberration corrected STEM images.

Original languageEnglish (US)
Article number012021
JournalJournal of Physics: Conference Series
Volume902
Issue number1
DOIs
StatePublished - Oct 16 2017
EventElectron Microscopy and Analysis Group Conference 2017, EMAG 2017 - Manchester, United Kingdom
Duration: Jul 3 2017Jul 6 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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