Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D-3D growth mode transition through Stranski-Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.
|Original language||English (US)|
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Aug 1 2009|
ASJC Scopus subject areas
- Materials Science(all)