Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors

Minjoo L. Lee; Eugene A. Fitzgerald

doi:10.1063/1.1627469

Strained Si/strained Ge dual-channel heterostructures on relaxed Si_0.5Ge_0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors

Minjoo L. Lee, Eugene A. Fitzgerald

Research output: Contribution to journal › Article › peer-review

Abstract

Surface strained Si(ε-Si) heterostructures grown on relaxed Si_1-xGe_x virtual substrates offer enhanced carrier mobilities over bulk Si for both n-type and p-type metal-oxide-semiconductor field-effect transistors. While single-channel heterostructures grown on Si_1-xGe_x with x=0.2-0.35 demonstrate electron mobility enhancements of 1.8-2.0,^2-4 the hole mobility enhancement in such heterostructures was minimal at high vertical effective fields.

Original language	English (US)
Pages (from-to)	4202-4204
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	20
DOIs	https://doi.org/10.1063/1.1627469
State	Published - Nov 17 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.1627469

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Cite this

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title = "Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors",

abstract = "Surface strained Si(ε-Si) heterostructures grown on relaxed Si1-xGex virtual substrates offer enhanced carrier mobilities over bulk Si for both n-type and p-type metal-oxide-semiconductor field-effect transistors. While single-channel heterostructures grown on Si1-xGex with x=0.2-0.35 demonstrate electron mobility enhancements of 1.8-2.0,2-4 the hole mobility enhancement in such heterostructures was minimal at high vertical effective fields.",

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AB - Surface strained Si(ε-Si) heterostructures grown on relaxed Si1-xGex virtual substrates offer enhanced carrier mobilities over bulk Si for both n-type and p-type metal-oxide-semiconductor field-effect transistors. While single-channel heterostructures grown on Si1-xGex with x=0.2-0.35 demonstrate electron mobility enhancements of 1.8-2.0,2-4 the hole mobility enhancement in such heterostructures was minimal at high vertical effective fields.

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