@article{3002d43416574fdf8e36794fe4070303,
title = "Strained layer instabilities on vicinal surfaces: Ge 0.8Si 0.2 epitaxy on laser textured Si(001)",
abstract = "The use of laser texturing for combinatorial studies of surface morphology was discussed. It was found that the morphologies of Ge 0.8Si 0.2 films were a rich function of substrate miscut. The size of structures was decreased with the increased growth rate due to thw suppression of coarsening at high growth rates. The results show the importance of anisotropy in surface stiffness for the formation of strained layer morphologies.",
author = "Fumiya Watanabe and Cahill, {David G.} and Sukwon Hong and Greene, {Joseph E.}",
note = "Funding Information: This material is based upon work supported by the U.S. Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. The sample characterization was carried out at the Center for Microanalysis of Materials, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. ",
year = "2004",
month = aug,
day = "16",
doi = "10.1063/1.1780604",
language = "English (US)",
volume = "85",
pages = "1238--1240",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}