Abstract
Germanium p-MOSFETs with a thin high-k dielectric (EOT∼ 1.6 nm) were fabricated on bulk Ge and epitaxial strained germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The strained germanium p-MOSFETs showed 2X enhancement in hole mobility compared to silicon control devices, a 35% increase in mobility compared to similarly processed bulk germanium p-MOSFETs, and enhanced transconductance relative to bulk Ge p-MOSFETs.
| Original language | English (US) |
|---|---|
| Pages | 406-411 |
| Number of pages | 6 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004 |
Other
| Other | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium |
|---|---|
| Country/Territory | United States |
| City | San Antonio, TX |
| Period | 5/10/04 → 5/12/04 |
ASJC Scopus subject areas
- General Engineering