Strained germanium MOSFETs: Devices and process technology

A. Ritenour, M. L. Lee, N. Lu, W. Bai, S. Yu, E. A. Fitzgerald, D. L. Kwong, D. A. Antoniadis

Research output: Contribution to conferencePaper

Abstract

Germanium p-MOSFETs with a thin high-k dielectric (EOT∼ 1.6 nm) were fabricated on bulk Ge and epitaxial strained germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The strained germanium p-MOSFETs showed 2X enhancement in hole mobility compared to silicon control devices, a 35% increase in mobility compared to similarly processed bulk germanium p-MOSFETs, and enhanced transconductance relative to bulk Ge p-MOSFETs.

Original languageEnglish (US)
Pages406-411
Number of pages6
StatePublished - Oct 28 2004
Externally publishedYes
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 10 2004May 12 2004

Other

OtherAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period5/10/045/12/04

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ritenour, A., Lee, M. L., Lu, N., Bai, W., Yu, S., Fitzgerald, E. A., Kwong, D. L., & Antoniadis, D. A. (2004). Strained germanium MOSFETs: Devices and process technology. 406-411. Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.