Strained Ge mosfet technology

Minjoo Larry Lee, Andrew Ritenour, Dimitri Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to conferencePaperpeer-review

Abstract

Strained Ge (ε-Ge) on relaxed Si 1-xGe x possesses extremely high hole mobility and can be used as a channel material for high-performance p-MOSFETs. In one configuration, referred to as a dual-channel heterostructure, the ε-Ge channel is epitaxially capped with strained Si (ε-Si) in order to allow the use of an SiO 2 gate dielectric. In an alternate configuration, a high-κ gate dielectric is deposited directly onto the ε-Ge, allowing surface-channel operation. We earlier reported on the optimization of dual-channel ε-Ge p-MOSFETs, demonstrating hole mobility enhancements over bulk Si as high as 10 times. More recently, we reported surface-channel ε-Ge p-MOSFETs with an HfO 2/TaN gate stack exhibiting a 2x mobility enhancement over similarly processed bulk Si devices. In this paper, we review the current progress in both dual-channel and surface-channel ε-Ge p-MOSFETs. Some results on the integration of n-MOSFETs will also be presented.

Original languageEnglish (US)
Pages89-98
Number of pages10
StatePublished - Dec 1 2004
Externally publishedYes
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

ASJC Scopus subject areas

  • Engineering(all)

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