Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates

Minjoo L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, Dimitri A. Antoniadis

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si0.3Ge0.7 virtual substrates. The poor interface between silicon dioxide (SiO2) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400 °C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly eight times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm2/V s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement-mode MOSFET with buried channel-like transport characteristics.

Original languageEnglish (US)
Pages (from-to)3344-3346
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
StatePublished - Nov 12 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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