Strain induced semiconductor nanotubes: From formation process to device applications

Research output: Contribution to journalReview article

Abstract

Semiconductor nanotubes (SNTs) represent a new class of nanotechnology building blocks. They are formed by a combination of bottom-up and top-down approaches, using strain induced self-rolling mechanism from epitaxially grown heterojunction films. This review summarizes several aspects of this emerging field, including the SNT formation process, its dependence on crystal orientation, strain direction and geometry as well as the structural, electronic and optical properties and their implications. The precise controllability of structural and spatial positioning and versatile functionality make SNTs and related three-dimensional (3D) architectures promising candidates for practical applications in next generation nanoelectronic and nanophotonic devices.

Original languageEnglish (US)
Article number193001
JournalJournal of Physics D: Applied Physics
Volume41
Issue number19
DOIs
StatePublished - Oct 7 2008

Fingerprint

Nanotubes
nanotubes
Semiconductor materials
Nanophotonics
Nanoelectronics
controllability
nanotechnology
Controllability
Nanotechnology
Crystal orientation
Electronic properties
positioning
Heterojunctions
Structural properties
heterojunctions
emerging
Optical properties
optical properties
Geometry
geometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Strain induced semiconductor nanotubes : From formation process to device applications. / Li, Xiuling.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 19, 193001, 07.10.2008.

Research output: Contribution to journalReview article

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