Strain induced semiconductor nanotubes: From formation process to device applications

Research output: Contribution to journalReview articlepeer-review


Semiconductor nanotubes (SNTs) represent a new class of nanotechnology building blocks. They are formed by a combination of bottom-up and top-down approaches, using strain induced self-rolling mechanism from epitaxially grown heterojunction films. This review summarizes several aspects of this emerging field, including the SNT formation process, its dependence on crystal orientation, strain direction and geometry as well as the structural, electronic and optical properties and their implications. The precise controllability of structural and spatial positioning and versatile functionality make SNTs and related three-dimensional (3D) architectures promising candidates for practical applications in next generation nanoelectronic and nanophotonic devices.

Original languageEnglish (US)
Article number193001
JournalJournal of Physics D: Applied Physics
Issue number19
StatePublished - Oct 7 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


Dive into the research topics of 'Strain induced semiconductor nanotubes: From formation process to device applications'. Together they form a unique fingerprint.

Cite this