Strain Evolution in Coherent Ge/Si Islands

Chuan Pu Liu, J. Murray David, David G. Cahill, Theodore I. Kamins, David P. Basile, R. Stanley Williams

Research output: Contribution to journalArticlepeer-review


Strain evolution of coherent Ge islands on Si(001) is measured using a newly developed transmission electron microscopy technique based on two-beam dark-field strain imaging. The strain measurements show that a metaslable Ge island shape is involved in the shape transition between pyramids and domes; this shape is more readily observed for growth at 550 than 600 °C because of the slower rate at which islands cross the kinetic barrier between shapes. The strain relaxation changes discontinuously between pyramids and domes, indicating that the underlying shape transition is first order.

Original languageEnglish (US)
Pages (from-to)1958-1961
Number of pages4
JournalPhysical review letters
Issue number9
StatePublished - Feb 28 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Strain Evolution in Coherent Ge/Si Islands'. Together they form a unique fingerprint.

Cite this