Strain effect in large silicon nanocrystal quantum dots

A. Thean, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

We present a computer simulation of strain effects on the electronic spectrum of 100 Å diam Si nanocrystal (nc-Si) quantum dots embedded in SiO2, based on the continuum strain model and deformation potential theory. We show that the coupling between the nc-Si geometry and the symmetry generated by the strain potential can enhance confinement in the quantum dot and can lift the degeneracy of the conduction band valleys for nonspherically symmetric nanocrystals.

Original languageEnglish (US)
Pages (from-to)1030-1032
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number7
DOIs
StatePublished - Aug 13 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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