Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Christopher D. Yerino, Paul J. Simmonds, Baolai Liang, Daehwan Jung, Christian Schneider, Sebastian Unsleber, Minh Vo, Diana L. Huffaker, Sven Höfling, Martin Kamp, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review


Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

Original languageEnglish (US)
Article number251901
JournalApplied Physics Letters
Issue number25
StatePublished - Dec 22 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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