Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

Yong Huang, Jae Hyun Ryou, Russell D. Dupuis, Daniel Zuo, Benjamin Kesler, Shun Lien Chuang, Hefei Hu, Kyou Hyun Kim, Yen Ting Lu, K. C. Hsieh, Jian Min Zuo

Research output: Contribution to journalArticlepeer-review

Abstract

We propose and demonstrate strain-balanced InAs/GaSb type-II superlattices (T2SLs) grown on InAs substrates employing GaAs-like interfacial (IF) layers by metalorganic chemical vapor deposition (MOCVD) for effective strain management, simplified growth scheme, improved materials crystalline quality, and reduced substrate absorption. The in-plane compressive strain from the GaSb layers in the T2SLs on the InAs was completely balanced by the GaAs-like IF layers formed by controlled precursor carry-over and anion exchange effects, avoiding the use of complicated IF layers and precursor switching schemes that were used for the MOCVD growth of T2SLs on GaSb. An infrared (IR) p-i-n photodiode structure with 320-period InAs/GaSb T2SLs on InAs was grown and the fabricated devices show improved performance characteristics with a peak responsivity of ∼1.9 A/W and a detectivity of ∼6.78 109 Jones at 8 m at 78 K. In addition, the InAs buffer layer and substrate show a lower IR absorption coefficient than GaSb substrates in most of the mid- and long-IR spectral range.

Original languageEnglish (US)
Article number011109
JournalApplied Physics Letters
Volume99
Issue number1
DOIs
StatePublished - Jul 4 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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