Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

H. W. Then, C. H. Wu, M. Feng, N. Holonyak, G. Walter

Research output: Contribution to journalArticlepeer-review

Abstract

Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base recombination (base current) and the device speed (bandwidth). A relationship between the spontaneous recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-doping) modified rate balance equations involving the spontaneous, A21, and stimulated recombination coefficients, B21 = B12, and is verified with experimental optical microwave modulation (bandwidth) data obtained on QW-LETs.

Original languageEnglish (US)
Article number263505
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
StatePublished - Jun 28 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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