Stochastic analysis of advanced photovoltaic devices

Daniel P. Heinzel, Hongyi Michael Wu, Angus Rockett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

First generation photovoltaics have made significant progress and are nearing their maximum potential. This has largely been accomplished because the materials are well understood, allowing present simulation tools, such as AMPS, wxAMPS, SCAPS, AFORS-HET, and ADEPT to describe their behaviors well. In more complicated materials, the device may physically change during use, as debated concerning CIGS metastabilities, making it difficult to model and design. Even more troublesome are organic photovoltaics that exhibit highly dispersive transport and critical sensitivity to interface recombination and charge transport. The fixed nature of the present photovoltaic simulation tools provides limited insight into experimental results. This paper describes a new software tool based on a stochastic approach to improve modeling of these complex devices.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2656-2661
Number of pages6
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • Numerical simulation
  • photovoltaics
  • semiconductor device modeling
  • software
  • stochastic

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Stochastic analysis of advanced photovoltaic devices'. Together they form a unique fingerprint.

Cite this