STM-induced H atom desorption from Si(100): Isotope effects and site selectivity

Ph Avouris, R. E. Walkup, A. R. Rossi, T. C. Shen, G. C. Abeln, J. R. Tucker, J. W. Lyding

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 × 1):H(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed σ → σ * excitation energy of the Si-H group. The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 × 1):H.

Original languageEnglish (US)
Pages (from-to)148-154
Number of pages7
JournalChemical Physics Letters
Volume257
Issue number1-2
DOIs
StatePublished - Jul 19 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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