STM-induced H atom desorption from Si(100): Isotope effects and site selectivity

Ph Avouris, R. E. Walkup, A. R. Rossi, T. C. Shen, G. C. Abeln, J. R. Tucker, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 × 1):H(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed σ → σ * excitation energy of the Si-H group. The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 × 1):H.

Original languageEnglish (US)
Pages (from-to)148-154
Number of pages7
JournalChemical Physics Letters
Volume257
Issue number1-2
DOIs
StatePublished - Jul 19 1996

Fingerprint

Isotopes
isotope effect
Desorption
selectivity
desorption
Atoms
atoms
Quenching
quenching
excitation
Excitation energy
Scanning tunneling microscopy
Excited states
Ground state
scanning tunneling microscopy
chemistry
ground state
thresholds
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Avouris, P., Walkup, R. E., Rossi, A. R., Shen, T. C., Abeln, G. C., Tucker, J. R., & Lyding, J. W. (1996). STM-induced H atom desorption from Si(100): Isotope effects and site selectivity. Chemical Physics Letters, 257(1-2), 148-154. https://doi.org/10.1016/0009-2614(96)00518-0

STM-induced H atom desorption from Si(100) : Isotope effects and site selectivity. / Avouris, Ph; Walkup, R. E.; Rossi, A. R.; Shen, T. C.; Abeln, G. C.; Tucker, J. R.; Lyding, Joseph W.

In: Chemical Physics Letters, Vol. 257, No. 1-2, 19.07.1996, p. 148-154.

Research output: Contribution to journalArticle

Avouris, P, Walkup, RE, Rossi, AR, Shen, TC, Abeln, GC, Tucker, JR & Lyding, JW 1996, 'STM-induced H atom desorption from Si(100): Isotope effects and site selectivity', Chemical Physics Letters, vol. 257, no. 1-2, pp. 148-154. https://doi.org/10.1016/0009-2614(96)00518-0
Avouris P, Walkup RE, Rossi AR, Shen TC, Abeln GC, Tucker JR et al. STM-induced H atom desorption from Si(100): Isotope effects and site selectivity. Chemical Physics Letters. 1996 Jul 19;257(1-2):148-154. https://doi.org/10.1016/0009-2614(96)00518-0
Avouris, Ph ; Walkup, R. E. ; Rossi, A. R. ; Shen, T. C. ; Abeln, G. C. ; Tucker, J. R. ; Lyding, Joseph W. / STM-induced H atom desorption from Si(100) : Isotope effects and site selectivity. In: Chemical Physics Letters. 1996 ; Vol. 257, No. 1-2. pp. 148-154.
@article{2e84268c73094b62a760520b84293e96,
title = "STM-induced H atom desorption from Si(100): Isotope effects and site selectivity",
abstract = "We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 × 1):H(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed σ → σ * excitation energy of the Si-H group. The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 × 1):H.",
author = "Ph Avouris and Walkup, {R. E.} and Rossi, {A. R.} and Shen, {T. C.} and Abeln, {G. C.} and Tucker, {J. R.} and Lyding, {Joseph W}",
year = "1996",
month = "7",
day = "19",
doi = "10.1016/0009-2614(96)00518-0",
language = "English (US)",
volume = "257",
pages = "148--154",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - STM-induced H atom desorption from Si(100)

T2 - Isotope effects and site selectivity

AU - Avouris, Ph

AU - Walkup, R. E.

AU - Rossi, A. R.

AU - Shen, T. C.

AU - Abeln, G. C.

AU - Tucker, J. R.

AU - Lyding, Joseph W

PY - 1996/7/19

Y1 - 1996/7/19

N2 - We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 × 1):H(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed σ → σ * excitation energy of the Si-H group. The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 × 1):H.

AB - We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 × 1):H(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed σ → σ * excitation energy of the Si-H group. The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 × 1):H.

UR - http://www.scopus.com/inward/record.url?scp=0030593404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030593404&partnerID=8YFLogxK

U2 - 10.1016/0009-2614(96)00518-0

DO - 10.1016/0009-2614(96)00518-0

M3 - Article

AN - SCOPUS:0030593404

VL - 257

SP - 148

EP - 154

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 1-2

ER -