Abstract
To enable accurate system-level electrostatic discharge (ESD) simulation, this article applies statistical learning to obtain I/O port models of the victim integrated circuits (ICs). A quasi-static I-V model derived using kernel regression can capture the circuit board dependency of the behavior observed at the I/O pin, regardless if there is snapback. The non-parametric kernel model can be reduced to a system-specific parametric model, which has smaller requirements for computing time and memory. In some cases, transient system-level ESD simulation may require the IC model to replicate the dynamic behavior of the nonlinear circuit. A recurrent neural network is demonstrated to be a suitable model in such cases. This article provides a detailed RNN training flow for IC pin modeling, and presents a Verilog-A implementation of the RNN for use with Simulation Program with Integrated Circuit Emphasis (SPICE)-type simulators.
Original language | English (US) |
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Pages (from-to) | 1302-1311 |
Number of pages | 10 |
Journal | IEEE Transactions on Electromagnetic Compatibility |
Volume | 63 |
Issue number | 5 |
DOIs | |
State | Published - Oct 1 2021 |
Keywords
- Electrostatic discharge (ESD)
- integrated circuit (IC) modeling
- kernel regression
- recurrent neural network (RNN)
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering