Abstract

Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated.

Original languageEnglish (US)
Article number054304
JournalJournal of Applied Physics
Volume104
Issue number5
DOIs
StatePublished - Sep 22 2008

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surface defects
bombardment
silicon
classifying
coordination number
ions
argon
molecular dynamics
atoms
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon. / Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

In: Journal of Applied Physics, Vol. 104, No. 5, 054304, 22.09.2008.

Research output: Contribution to journalArticle

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