Abstract

We have performed a comparative study of the accuracy of the continuum model with atomistic simulations for silicon nanoelectromechanical (NEM) switches. Using the validated continuum nonlinear elastic model, the effect of van der Waals interactions on static and dynamic pull-in are studied. We also investigated the pull-in time and the resonance frequency shift due to an applied DC bias voltage for the silicon NEM switches. Finally, we present here several results which address the key issues in the development of computational design tools and the design rules for nanoelectromechanical systems.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages464-467
Number of pages4
StatePublished - Dec 1 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Keywords

  • Continuum theory
  • Dynamic
  • NEMS
  • Pull-in
  • Static analysis
  • Van der waals interactions

ASJC Scopus subject areas

  • Engineering(all)

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