Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures

J. M. Dallesasse; P. Gavrilovic; N. Holonyak; R. W. Kaliski; D. W. Nam; E. J. Vesely; R. D. Burnham

doi:10.1063/1.102902

Stability of AlAs in Al_xGa_1-xAs-AlAs-GaAs quantum well heterostructures

J. M. Dallesasse, P. Gavrilovic, N. Holonyak, R. W. Kaliski, D. W. Nam, E. J. Vesely, R. D. Burnham

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on the long-term (≳8 yr) degradation of Al _xGa_1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs "buried" layers (confining layers) is found to be much less stable than material containing thinner (≲200 Å) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.

Original language	English (US)
Pages (from-to)	2436-2438
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	24
DOIs	https://doi.org/10.1063/1.102902
State	Published - 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.102902

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title = "Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures",

abstract = "Data are presented on the long-term (≳8 yr) degradation of Al xGa1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs {"}buried{"} layers (confining layers) is found to be much less stable than material containing thinner (≲200 {\AA}) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.",

author = "Dallesasse, {J. M.} and P. Gavrilovic and N. Holonyak and Kaliski, {R. W.} and Nam, {D. W.} and Vesely, {E. J.} and Burnham, {R. D.}",

year = "1990",

doi = "10.1063/1.102902",

language = "English (US)",

volume = "56",

pages = "2436--2438",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures

AU - Dallesasse, J. M.

AU - Gavrilovic, P.

AU - Holonyak, N.

AU - Kaliski, R. W.

AU - Nam, D. W.

AU - Vesely, E. J.

AU - Burnham, R. D.

PY - 1990

Y1 - 1990

N2 - Data are presented on the long-term (≳8 yr) degradation of Al xGa1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs "buried" layers (confining layers) is found to be much less stable than material containing thinner (≲200 Å) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.

AB - Data are presented on the long-term (≳8 yr) degradation of Al xGa1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs "buried" layers (confining layers) is found to be much less stable than material containing thinner (≲200 Å) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.

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