Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures

J. M. Dallesasse, P. Gavrilovic, N. Holonyak, R. W. Kaliski, D. W. Nam, E. J. Vesely, R. D. Burnham

Research output: Contribution to journalArticlepeer-review


Data are presented on the long-term (≳8 yr) degradation of Al xGa1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs "buried" layers (confining layers) is found to be much less stable than material containing thinner (≲200 Å) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.

Original languageEnglish (US)
Pages (from-to)2436-2438
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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