@inproceedings{0267e048704d4fada65b2bac76064ecc,
title = "Sputtered-gate-SiO2/AiGaN/GaN MOSHEMT for high breakdown voltage achievement",
abstract = "By using RF magnetron sputtering with oxygen compensation, high-quality SiO2-on-GaN with a breakdown field of 9.6 MV /cm was achieved. A post-annealing treatment was then developed to remove the sputtering-induced epilayer damage, which not only recovered, but also improved the electron concentration and mobility of the 2-D electron gas by 21.7\% and 5.5\%, respectively. A high-performance SiO2 / AlGaN / GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 m. This breakdown voltage performance of the device is among the best of GaN-based MOSHEMTs reported to date, thus is ideally suited for high-power applications.",
keywords = "breakdown voltage, gate-SiO2, MOSHEMT, RF magnetron sputtering",
author = "Liang Pang and Yaguang Lian and Kim, \{Dong Seok\} and Lee, \{Jung Hee\} and Kyekyoon Kim",
year = "2013",
doi = "10.1109/PECI.2013.6506027",
language = "English (US)",
isbn = "9781467356022",
series = "2013 IEEE Power and Energy Conference at Illinois, PECI 2013",
pages = "13--17",
booktitle = "2013 IEEE Power and Energy Conference at Illinois, PECI 2013",
note = "2013 IEEE Power and Energy Conference at Illinois, PECI 2013 ; Conference date: 22-02-2013 Through 23-02-2013",
}