Sputtered-gate-SiO2/AiGaN/GaN MOSHEMT for high breakdown voltage achievement

Liang Pang, Yaguang Lian, Dong Seok Kim, Jung Hee Lee, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By using RF magnetron sputtering with oxygen compensation, high-quality SiO2-on-GaN with a breakdown field of 9.6 MV /cm was achieved. A post-annealing treatment was then developed to remove the sputtering-induced epilayer damage, which not only recovered, but also improved the electron concentration and mobility of the 2-D electron gas by 21.7% and 5.5%, respectively. A high-performance SiO2 / AlGaN / GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 m. This breakdown voltage performance of the device is among the best of GaN-based MOSHEMTs reported to date, thus is ideally suited for high-power applications.

Original languageEnglish (US)
Title of host publication2013 IEEE Power and Energy Conference at Illinois, PECI 2013
Pages13-17
Number of pages5
DOIs
StatePublished - 2013
Event2013 IEEE Power and Energy Conference at Illinois, PECI 2013 - Champaign, IL, United States
Duration: Feb 22 2013Feb 23 2013

Other

Other2013 IEEE Power and Energy Conference at Illinois, PECI 2013
CountryUnited States
CityChampaign, IL
Period2/22/132/23/13

Keywords

  • breakdown voltage
  • gate-SiO2
  • MOSHEMT
  • RF magnetron sputtering

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology

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  • Cite this

    Pang, L., Lian, Y., Kim, D. S., Lee, J. H., & Kim, K. (2013). Sputtered-gate-SiO2/AiGaN/GaN MOSHEMT for high breakdown voltage achievement. In 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 (pp. 13-17). [6506027] https://doi.org/10.1109/PECI.2013.6506027