Sputter-induced formation of an electron accumulation layer in In 0.52Al0.48As

J. E. Maslar; P. W. Bohn; S. Agarwala; I. Adesida; C. Caneau; R. Bhat

doi:10.1063/1.111202

Sputter-induced formation of an electron accumulation layer in In _0.52Al_0.48As

J. E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, R. Bhat

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Abstract

Ar-sputtering of In_0.52Al_0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.

Original language	English (US)
Pages (from-to)	3575-3577
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	26
DOIs	https://doi.org/10.1063/1.111202
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.111202

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@article{6452cea15a564d06a5426d0f8dee6207,

title = "Sputter-induced formation of an electron accumulation layer in In 0.52Al0.48As",

abstract = "Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.",

author = "Maslar, {J. E.} and Bohn, {P. W.} and S. Agarwala and I. Adesida and C. Caneau and R. Bhat",

year = "1994",

doi = "10.1063/1.111202",

language = "English (US)",

volume = "64",

pages = "3575--3577",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Sputter-induced formation of an electron accumulation layer in In 0.52Al0.48As

AU - Maslar, J. E.

AU - Bohn, P. W.

AU - Agarwala, S.

AU - Adesida, I.

AU - Caneau, C.

AU - Bhat, R.

PY - 1994

Y1 - 1994

N2 - Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.

AB - Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.

UR - http://www.scopus.com/inward/record.url?scp=0028444223&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028444223&partnerID=8YFLogxK

U2 - 10.1063/1.111202

DO - 10.1063/1.111202

M3 - Article

AN - SCOPUS:0028444223

SN - 0003-6951

VL - 64

SP - 3575

EP - 3577

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -