Sputter-induced formation of an electron accumulation layer in In 0.52Al0.48As

J. E. Maslar; P. W. Bohn; S. Agarwala; I. Adesida; C. Caneau; R. Bhat

doi:10.1063/1.111202

Sputter-induced formation of an electron accumulation layer in In _0.52Al_0.48As

J. E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, R. Bhat

Research output: Contribution to journal › Article › peer-review

Abstract

Ar-sputtering of In_0.52Al_0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.

Original language	English (US)
Pages (from-to)	3575-3577
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	26
DOIs	https://doi.org/10.1063/1.111202
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.111202

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title = "Sputter-induced formation of an electron accumulation layer in In 0.52Al0.48As",

abstract = "Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.",

author = "Maslar, {J. E.} and Bohn, {P. W.} and S. Agarwala and I. Adesida and C. Caneau and R. Bhat",

year = "1994",

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language = "English (US)",

volume = "64",

pages = "3575--3577",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Maslar, J. E.

AU - Bohn, P. W.

AU - Agarwala, S.

AU - Adesida, I.

AU - Caneau, C.

AU - Bhat, R.

PY - 1994

Y1 - 1994

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AB - Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.

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